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Electronic properties of polyaniline doped with dodecylbenzenesulphonic acid (PANI-DBSA) and poly(methyl methacrylate) (PMMA) blends in the presence of hydroquinone

Identifieur interne : 004260 ( Main/Repository ); précédent : 004259; suivant : 004261

Electronic properties of polyaniline doped with dodecylbenzenesulphonic acid (PANI-DBSA) and poly(methyl methacrylate) (PMMA) blends in the presence of hydroquinone

Auteurs : RBID : Pascal:10-0275058

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English descriptors

Abstract

Films of polyaniline doped with dodecylbenzenesulphonic acid (DBSA) and poly(methyl methacrylate) (PMMA) blends were studied with and without compatibilising agent "hydroquinone". Hydroquinone was used to maximize solubility and to make it compatible with polymethylmethacrylate (PMMA) to get uniform and homogenous films on indium tin oxide ITO coated glass. Current density measurement as a function of voltage (J-V) and capacitance voltage (C-V) measurements at different temperature were carried out. The observed J-V and C-V characteristics can be satisfactorily fitted using the modified Schottky equations. The junction parameters were strongly influenced by hydroquinone. From C-V characteristics, the built-in voltage and charge carriers concentration were also calculated and discussed.

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Pascal:10-0275058

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<title xml:lang="en" level="a">Electronic properties of polyaniline doped with dodecylbenzenesulphonic acid (PANI-DBSA) and poly(methyl methacrylate) (PMMA) blends in the presence of hydroquinone</title>
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<name sortKey="Shakoor, A" uniqKey="Shakoor A">A. Shakoor</name>
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<s1>Department of Physics, Quaid-i-Azam University</s1>
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<name sortKey="Rizvi, T Z" uniqKey="Rizvi T">T. Z. Rizvi</name>
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<name sortKey="Sulaiman, M" uniqKey="Sulaiman M">M. Sulaiman</name>
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<name sortKey="Ishtiaq, M" uniqKey="Ishtiaq M">M. Ishtiaq</name>
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<term>CV characteristic</term>
<term>Carrier density</term>
<term>Coated material</term>
<term>Current density</term>
<term>Doped materials</term>
<term>Doping</term>
<term>Electric current measurement</term>
<term>Electronic properties</term>
<term>Electronic structure</term>
<term>Glass</term>
<term>Indium oxide</term>
<term>PMMA</term>
<term>Polyanilines</term>
<term>Solubility</term>
<term>Tin additions</term>
<term>Voltage dependence</term>
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<term>Propriété électronique</term>
<term>Structure électronique</term>
<term>Dopage</term>
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<term>Addition étain</term>
<term>Densité courant</term>
<term>Mesure courant électrique</term>
<term>Dépendance tension</term>
<term>Caractéristique capacité tension</term>
<term>Densité porteur charge</term>
<term>Aniline polymère</term>
<term>Matériau dopé</term>
<term>Méthacrylate de méthyle polymère</term>
<term>Oxyde d'indium</term>
<term>Matériau revêtu</term>
<term>Verre</term>
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<div type="abstract" xml:lang="en">Films of polyaniline doped with dodecylbenzenesulphonic acid (DBSA) and poly(methyl methacrylate) (PMMA) blends were studied with and without compatibilising agent "hydroquinone". Hydroquinone was used to maximize solubility and to make it compatible with polymethylmethacrylate (PMMA) to get uniform and homogenous films on indium tin oxide ITO coated glass. Current density measurement as a function of voltage (J-V) and capacitance voltage (C-V) measurements at different temperature were carried out. The observed J-V and C-V characteristics can be satisfactorily fitted using the modified Schottky equations. The junction parameters were strongly influenced by hydroquinone. From C-V characteristics, the built-in voltage and charge carriers concentration were also calculated and discussed.</div>
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